Expand / We are all intimately Knowledgeable about this Burj Khalifa’s connection to the Eiffel Tower, correct? (charge: Micron)
On Monday, storage and memory seller Micron announced its newest 176-layer 3D NAND (the storage moderate underlying most SSDs) procedure is in production, and it has started shipping to customers. The technology needs to provide increased storage densities and write endurance, better functionality, and reduced prices.
Replacement-gate design
Replacement-gate structure removes gaps between tissues and the accidental capacitive impact those openings inevitably trigger. (charge: Micron)
The new NAND procedure is Micron’s fifth production of NAND and its next generation of replacement-gate structure –a replacement into the sooner, floating-gate architecture employed by both Micron and Intel previously. In conventional floating gates, both insulators different person cells, which leads to undesirable capacitance between tissues.
Micron’s replacement-gate structure rather assembles multiple cells into one insulation structure, almost removing cell-to-cell capacitance, also (based on Micron) raising write endurance, energy efficiency, and functionality. The business hasn’t yet supplied concrete benchmarks measuring these claims.
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